pnp mj2500 ? mj2501 29/10/2012 comset semiconductors 1 | 3 complementary power darlingtons the mj2500, and mj2501 are silicon epitaxial-base pnp power transistors in monolithic darlington configuration and are mounted in jedec to-3 metal case. they are intented for use in power linear and switching applications. the complementary npn types are the mj3000 and mj3001 respectively compliance to rohs absolute maximum ratings symbol ratings value unit v cbo collector-base voltage i e =0 mj2500 -60 v mj2501 -80 v ceo collector-emittervoltage i b =0 mj2500 -60 v mj2501 -80 v ebo emitter-base voltage i c =0 mj2500 -5.0 v mj2501 i c collector current mj2500 -10 a mj2501 i b base current mj2500 -0.2 a mj2501 p t power dissipation @ t c < 25 mj2500 150 w mj2501 t j junction temperature mj2500 200 c t s storage temperature mj2501 -65 to +200 thermal characteristics symbol ratings value unit r thj-c thermal resistance, junction to case 1.17 c/w
pnp mj2500 ? mj2501 29/10/2012 comset semiconductors 2 | 3 electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit bv ceo collector-emitter breakdown voltage (*) i c =-100ma i b =0 mj2500 -60 - - v mj2501 -80 - - i ceo collector cutoff current v ce =-30 v i b =0 mj2500 - - -1.0 ma v ce =-40 v i b =0 mj2501 - - i ebo emitter cutoff current v be =-5.0 v i c =0 mj2500 - - -2.0 ma mj2501 i cer collector-emitter leakage current v cb =-60 v r be =1.0 k ? mj2500 - - -1.0 ma v cb =-80 v r be =1.0 k ? mj2501 - - v cb =-60 v r be =1.0 k ? t c =150c mj2500 - - -5.0 v cb =-80 v r be =1.0 k ? t c =150c mj2501 - - v ce(sat) collector-emitter saturation voltage (*) i c =-5.0 a i b =-20 ma mj2500 - - -2.0 v mj2501 i c =-10 a i b =-50 ma mj2500 - - -4.0 mj2501 v be base-emitter voltage (*) i c =-5.0 a v ce =-3.0v mj2500 - - -3 v mj2501 h fe dc current gain (*) v ce =-3.0 v i c =-5.0 a mj2500 1000 - - - mj2501 (*) pulse width 300 s, duty cycle 2.0%
pnp mj2500 ? mj2501 29/10/2012 comset semiconductors 3 | 3 mechanical data case to-3 revised september 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min max a 11 13.10 b 0.97 1.15 c 1.5 1.65 d 8.32 8.92 f 19 20 g 10.70 11.1 n 16.50 17.20 p 25 26 r 4 4.09 u 38.50 39.30 v 30 30.30 pin 1 : base pin 2 : emitter case : collector
|
